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?2014 silicon storage technology, inc. ds70005029c 07/15 data sheet www.microchip.com features ? high gain: ? more than 32 db gain across 2.4?2.5 ghz over tempera- ture -40c to +85c ? configured for high linearity ? 20 dbm at 2.5% devm, mcs7-ht40, 200ma ? 18 dbm at 1.8% devm, mcs9-vht40, 180 ma ? 23 dbm typical spectrum mask compliance, mcs0-20 ? configured for high efficiency ? 23 dbm at 3% devm, 80 2.11g ofdm 54 mbps, 310ma ? 25.5 dbm typical spectrum mask compliance, 802.11b, 1mbps ? >29 dbm p1db ? meets 802.11g ofdm acpr re quirement up to 26 dbm ? high power-added efficiency/low operating current ?low i ref current for power-up/down control ?i ref <2 ma ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? low shut-down current:2a ? high temperature stability ? typically 1 db gain/power variation between 0c to +85c ? excellent on-chip power detection ? 20 db linear dynamic range ? temperature- and vswr-insensitive ? simple input/output matching ? packages available ? 16-contact vqfn ? 3mm x 3mm ? 12-contact xqfn ? 2mm x 2mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11b/g/n/256 qam) ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b sst12lp15b is a versatile power amplif ier based on the highly-reliable ingap/ gaas hbt technology. easily configured for high-linear operation meeting the evm requirements for 256 qam applications , and for high-efficiency applications with excellent power-added efficiency while operating ov er the 2.4- 2.5 ghz fre- quency band. configured for high efficiency, sst12lp15b will typically meet the 802.11g spectrum mask at 23 dbm with 270 ma. configured for high linearity, sst12lp15b will provide less than 2.5% evm, up to 20 dbm, with mcs7-ht40 modulation, and less than 1.75% evm, up to 18 dbm, with mcs9-vht40 modula- tion. this power amplifier also features easy board-level usage along with high- speed power-up/down control through the reference voltage pins. the sst12lp15b is offered in both a 3mm x 3mm, 16-contact vqfn package and a 2mm x 2mm, 12-contact xqfn package.
?2014 silicon storage technology, inc. ds70005029c 07/15 2 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet product description sst12lp15b is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. this power amplifier can be easily configured for both high-efficiency with low evm for high data rate applications and for high power-added efficiency (pae) while operating over the 2.4- 2.5 ghz fre- quency band. there are two application circ uits provided to show this versatility. configured for high power-added efficiency, sst12lp15b provides more than 32 db gain and typically meets 3% evm up to 23 dbm output power for 54 mbps 802.11g operation. this power amplifier also meets spectral mask compliance output power up to 25 dbm for 802.11g and up to 25.5 dbm for 802.11b operation. at 4.5v operation, the sst12lp15b-vqfn provides up to 24 dbm at 3% evm. configured for high linearity, sst12lp15b provides more than 34 db gain. it typically meets 2.5% evm up to 20 dbm using mcs7-ht40 modulation and meets 1.8% evm up to 18 dbm using mcs9- vht40 modulation. this device also features easy board-level us age along with high-speed power-up/down control through the reference voltage pins. ultra-low reference current (total i ref ~2 ma) makes the sst12lp15b controllable by an on/off switching signal directly from the baseband chip. these fea- tures coupled with low operating current make sst12lp15b ideal for the final stage power amplifica- tion in battery-powered 802.11b/g/n/256 qam wlan transmitter applications. the power amplifier has an excellent, wide dynamic range (>20 db), db-wise linear on-chip power detector. the excellent on-chip power detector provides a reliable solution to board-level power control. the sst12lp15b is offered in both 16-contact vqfn (3mm x 3mm) and 12-contact xqfn (2mm x 2mm) packages. see figures 3 and 4 for pin assignments and tables 1 and 2 for pin descriptions.
?2014 silicon storage technology, inc. ds70005029c 07/15 3 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet functional blocks figure 1: functional block diagram for 3mm x 3mm, 16-contact vqfn (qvc) 2 56 8 16 vcc1 15 1 14 vcc2 nc 49 11 12 10 13 nc vccb vref1 vref2 dnu vcc3 rfout rfout det nc 3 rfin rfin nc bias circuit 7 1424 b2.1
?2014 silicon storage technology, inc. ds70005029c 07/15 4 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet figure 2: functional block diagram for 2mm x 2mm, 12-contact xqfn (qxb) 12 vcc1 11 10 vcc2 nc 7 9 8 vref1 vref2 det vcc3 rfout/vcc2 nc nc 2 1 3 rfin vccb 456 75029 b1.2 bias circuit
?2014 silicon storage technology, inc. ds70005029c 07/15 5 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet pin assignments and pin descriptions figure 3: pin assignments for 3mm x 3mm, 16-contact vqfn (qvc) table 1: pin description for 3mm x 3mm,16-contact vqfn symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. nc 1 no connection unconnected pins. rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled nc 4 no connection unconnected pins. vccb 5 power supply pwr supply voltage for bias circuit vref1 6 pwr 1st and 2nd stage idle current control vref2 7 pwr 3rd stage id le current control dnu 8 do not use do not use or connect det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output vcc3 12 power supply pwr power supply, 3rd stage nc 13 no connection unconnected pins. vcc2 14 power supply pwr power supply, 2nd stage nc 15 no connection unconnected pins. vcc1 16 power supply pwr power supply, 1st stage t1.0 75029 56 8 16 vcc1 15 14 vcc2 nc 9 11 12 10 13 nc vccb vref1 vref2 dnu vcc3 rfout rfout det 2 1 4 3 nc rfin rfin nc 7 1424 16-vqfn p1.0 top view (contacts facing down) rf and dc gnd 0
?2014 silicon storage technology, inc. ds70005029c 07/15 6 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet figure 4: pin assignments for 2mm x 2mm, 12-contact xqfn (qxb) table 2: pin description for 2mm x 2mm,12-contact xqfn symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low-inductance ground pad nc 1 no connection unconnected pin rfin 2 i rf input, dc decoupled vccb 3 power supply pwr supply voltage for bias circuit vref1 4 pwr 1 st and 2 nd stage idle current control vref2 5 pwr 3 rd stage idle current control det 6 o on-chip power detector nc 7 no connection unconnected pin rfout 8 o rf output, dc decoupled vcc3 9 power supply pwr power supply, 3 rd stage vcc2 10 power supply pwr power supply, 2 nd stage nc 11 no connection unconnected pin vcc1 12 power supply pwr power supply, 1 st stage t2.0 75029 12 vcc1 11 10 vcc2 nc 7 9 8 vref1 vref2 det vcc3 rfout nc nc 2 1 3 rfin vccb 45 6 1424 p.10 top view (contacts facing down)
?2014 silicon storage technology, inc. ds70005029c 07/15 7 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet electrical specifications the dc and rf specifications for th e power amplifier are specified below. table 4 shows the dc and rf characteristics for the c onfiguration that achieves high linearity for 802.11n and 256 qam applications. the associated schematic is shown in figure 25 for the16-contact vqfn package. the rf performance is shown in figures 20 through 24. table 5 shows the dc and rf characteristics for the c onfiguration that achieves high power-added efficiency (pae). the associated schematic is shown in figure 18 for the 16-contact vqfn package. the rf perfor- mance is shown in figures 13 through 17. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) average input power (p in ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm 1. never measure with cw source. puls ed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. average output power (p out ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dbm supply voltage (v ccb , v cc1 , v cc2 , v cc3 ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +5.0v 2 2. output power must be limited to 20 dbm at 5v v cc and limited to 26 dbm at 4.5v v cc reference voltage (v ref1 , v ref2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.3v dc supply current (i cc ) 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 ma 3. measured with 100% duty cycle 54 mbps 802.11g ofdm signal operating temperature (t a ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds table 3: operating range range ambient temp v cc industrial -40c to +85c 3.0v to 4.5v t3.1 75029
?2014 silicon storage technology, inc. ds70005029c 07/15 8 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high- linearity, low evm applications typical performance characteristics for high linear output power for 16-con- tact vqfn package (schematic in figure 11) table 4: dc and rf characteristics for high-linearity performance at 25c, at 3.3v vcc unless otherwise noted, for 16-contact vqfn (schematic in figure 25) symbol parameter min. typ max. unit v cc supply voltage at pins 5, 12, 14, and 16 3.0 3.3 4.5 v i cq idle current with no rf 135 ma v reg reference voltage 2.80 2.85 2.95 v i cc current consumption at 18 dbm, 256 qam 180 ma current consumption at 20 dbm, mcs7-ht40 200 ma current consumption at 23 dbm, mcs0-ht20 365 ma f l-u frequency range 2412 2484 mhz g small signal gain 34 37 db g var1 gain variation over band (2412?2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db 2f harmonics at 25 dbm, without external filters -43 dbm/ mhz 3f -25 4f -30 5f -30 evm evm @ 22 dbm output power with 802.11g ofdm 54 mbps signal 3 % evm @ 24 dbm output power with 8 02.11g ofdm 54 mbps at 4.5v v cc 3% evm @ 20 dbm output power with mcs7-ht40 2.5 % evm @ 18 dbm output power with mcs9-vht40 1.8 % p out output power to meet 802.11g ofdm 6 mbps spectrum mask 23.5 dbm output power to meet 802.11b dsss 1 mbps spectrum mask 24 dbm output power to meet mcs0-ht20 spectrum mask 23 dbm output power to meet 802.11b cck 1 mbps spectrum mask at 4.5v v cc 27 dbm t4.1 75029
?2014 silicon storage technology, inc. ds70005029c 07/15 9 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, unless otherwise specified figure 5: s-parameters s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) 1424 s-parms. 3.0 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 s22 versus frequency -30 -25 -20 -15 -10 -5 0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
?2014 silicon storage technology, inc. ds70005029c 07/15 10 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, mcs7-ht40 802.11n signal, unless otherwise noted figure 6: dynamic evm versus output power measured with sequence only figure 7: dynamic evm versus output power for 256 qam with mcs9-vht40 modulation 1424 f11.0 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 101112131415161718192021222324 evm (%) output power (dbm) dynamic evm versus output power 2412 mhz 2442 mhz 2472 mhz 1424 f22.0 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 101112131415161718192021222324 evm (%) output power (dbm) 2412 mhz 2442 mhz 2472, mhz
?2014 silicon storage technology, inc. ds70005029c 07/15 11 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, mcs7-ht40 802.11n signal, unless otherwise noted figure 8: gain versus output power figure 9: total current consumption 1424 f12.1 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 power gain (db) output power (dbm) power gain versus output power 2412 mhz 2442 mhz 2472 mhz 1424 f13.1 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 0123456789101112131415161718192021222324 supply current (ma) output power (dbm) instantaneous current versus output power 2412 mhz 2442 mhz 2472 mhz
?2014 silicon storage technology, inc. ds70005029c 07/15 12 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, mcs7-ht40 802.11n signal, unless otherwise noted figure 10: detector characteristics versus output power figure 11: typical schematic for high-linearity, 802.11b/g/n/256 qam applications for 16- contact vqfn, 3.3v 1424 f15.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 detector voltage (v) output power (dbm) instantaneous vdet versus output power 2412 mhz 2442 mhz 2472 mhz 2 5 6 7 8 9 11 16 15 1 50 /20mil 50 rfout 100pf 100pf 2.7pf 50 /125 mil 50 rfin vreg 1 vreg 2 14 13 4.7 f 0.1 f vcc 4 12 10 f 0.1 r2=200 r1=200 3 0.1 f det 1424 schematic.4.0 suggested operation conditions: 1 v cc = 3.3v 2. vreg1=vreg2=2.85v * could be removed if -7 db return loss is acceptable r3=100 r5=68 * f 0.1 sst12lp15b 3x3 16l vqfn top view length = 220 mil, width = 10 mil trace r4=7.5k
?2014 silicon storage technology, inc. ds70005029c 07/15 13 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-li nearity configuration (continued) figure 12: typical schematic for high-linearity, 802.11b/g/n/256 qam applications for 16- contact vqfn, 4.5v 2 5 6 7 8 9 11 16 15 1 50 rfout 100pf 100pf 2.7pf 50 /125 mil 50 rfin vreg1 vreg2 14 13 4.7 f 0.1 f vcc 4 12 10 f 0.1 56 249 3 0.1 f det 1424 schematic.7.0 suggested operation conditions: 1 v cc = 4.5v 2. vreg1=vreg2=2.85v 100 1.8 nh f 0.1 sst12lp15b 3x3 16l vqfn top view 7.5k det_ref 0 1.2 nh
?2014 silicon storage technology, inc. ds70005029c 07/15 14 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-efficiency configuration typical performance characteristics fo r high linear power, with good pae configuration, for 16-c ontact vqfn package (sch ematic in figure 18) table 5: dc and rf characteristics for high linear power, with good pae performance at 25c, for 16-contact vqfn (schematic in figure 18) symbol parameter min. typ max. unit v cc supply voltage at pins 5, 12, 14, and 16 3.0 3.3 4.5 v i cq idle current to meet evm ~3.5% @ 23 dbm output power with 802.11g ofdm 54 mbps signal 80 ma v reg1 reference voltage for pin 6, with 806 ? resistor 2.75 2.85 2.95 v v reg2 reference voltage for pin 7, with 806 ? resistor 2.75 2.85 2.95 v i cc current consumption to meet 802. 11g ofdm 6 mbps spectrum mask @ 25 dbm output power 330 ma current consumption to meet 802.11b dsss 1 mbps spectrum mask @ 24 dbm output power 310 ma f l-u frequency range 2412 2484 mhz g small signal gain 35 36 db g var1 gain variation over band (2412?2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db 2f harmonics at 25 dbm, without external filters -43 dbm/ mhz 3f -25 4f -30 5f -30 evm added evm @ 23 dbm output power with 802.11g ofdm 54 mbps signal 3.5 % p out output power to meet 802.11g ofdm 6 mbps spectrum mask 24 25 dbm output power to meet 802.11b dsss 1 mbps spectrum mask 23 24 dbm t5.1 75029
?2014 silicon storage technology, inc. ds70005029c 07/15 15 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-e fficiency configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, unless otherwise specified figure 13: s-parameters s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) 1424 s-parms. 2.0 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 s22 versus frequency -30 -25 -20 -15 -10 -5 0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
?2014 silicon storage technology, inc. ds70005029c 07/15 16 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-e fficiency configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, 54 mbps 802.11g ofdm signal figure 14: evm versus output power measured with equalizer training set to sequence only figure 15: gain versus output power 1424 f6.0 evm versus output power 0 1 2 3 4 5 6 7 8 9 10 01234567 8 9 10111213141516171 8 19 20 21 22 23 24 25 26 27 2 8 output power (dbm) evm (%) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1424 f7.0 gain versus output power 20 22 24 26 28 30 32 34 36 38 40 01234567 8 910111213141516171 8 19 20 21 22 23 24 25 26 27 2 8 output power (dbm) gain (db) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz
?2014 silicon storage technology, inc. ds70005029c 07/15 17 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-e fficiency configuration (continued) figure 16: total current consumption for 802.11g operation versus output power figure 17: detector characteristics versus output power 1424 f8.0 supply current versus output power 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 01234567 8 9 10111213141516171 8 19 20 21 22 23 24 25 26 27 2 8 output power (dbm) supply current (ma) fre q=2.412 ghz fre q=2.442 ghz fre q=2.472 ghz 1424 f10.0 detector voltag e versus output power 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 01234567 8 9 10111213141516171 8 19 20 21 22 23 24 25 26 27 2 8 output power (dbm) detector volta g e (v) fre q =2.412 ghz fre q =2.442 ghz fre q =2.472 ghz
?2014 silicon storage technology, inc. ds70005029c 07/15 18 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-e fficiency configuration (continued) figure 18: typical schematic for 3.3v, high-efficien cy 802.11b/g/n applications for 16-con- tact vqfn 2 5 6 7 8 9 11 16 15 1 50 /20mil 50 rfout 100pf 100pf 2.7pf 50 /125 mil 50 rfin vreg 1 vreg 2 14 13 4.7 f 0.1 f vcc 4 12 10 f 0.1 r2=806 r1=806 3 0.1 f det 1424 schematic.3.2 suggested operation conditions: 1 v cc = 3.3v 2. vreg1=vreg2=2.85v * could be removed if -7 db return loss is acceptable r3=100 3.3nh * f 0.1 sst12lp15b 3x3 16l vqfn top view length = 220 mil, width = 10 mil trace r4=7.5k
?2014 silicon storage technology, inc. ds70005029c 07/15 19 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 3mm x 3mm, 16-contact vqfn high-e fficiency configuration (continued) figure 19: typical schematic for 4.5v, high-efficien cy 802.11b/g/n applications for 16-con- tact vqfn 2 5 6 7 8 9 11 16 15 1 50 / 0.8 50 rfout 100pf 100pf 2.7pf 50 /6 50 rfin vreg 1 vreg 2 14 13 10 f 0.1 f vcc 4 12 10 f 0.1 r2=56 r1=249 3 0.1 f det 1424 schematic.6.0 suggested operation conditions: 1 v cc = 4.5v 2. vreg1=vreg2=2.85v * could be removed if -7 db return loss is acceptable **position close to the pa r3=100 1.8nh * f**0.1 sst12lp15b 3x3 16l vqfn top view r4=7.5k 12 nh f**0.1
?2014 silicon storage technology, inc. ds70005029c 07/15 20 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 2mm x 2mm, 12-contact xqfn high-linearity configuration typical performance characteristics for high-spectrum mask compliant output power configuration for 12-contact xq fn package (schematic in figure 25) table 6: dc and rf characteristics for high-spectrum mask compliant output power, performance at 25c, for 12-contact xqfn (schematic in figure 25) symbol parameter min. typ max. unit v cc supply voltage at pins 3, 9, 10, and 12 3.0 3.3 4.5 v i cq idle current to meet evm ~3.5% @ 23 dbm output power with 802.11g ofdm 54 mbps signal 190 ma v reg1 reference voltage for pin 4 2.75 2.85 2.95 v v reg2 reference voltage for pin 5 2.75 2.85 2.95 v i cc current consumption to meet 80 2.11g ofdm 6 mbps spectrum mask @ 25.5 dbm output power 380 ma current consumption to meet 3% evm, 54 mbps@ 23 dbm output power 310 ma f l-u frequency range 2412 248 4 mhz g small signal gain 31 32 db g var1 gain variation over band (2412?2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db 2f harmonics at 25 dbm, without external filters -43 dbm / mhz 3f -25 4f -30 5f -30 evm added evm @ 23 dbm output power with 802.11g ofdm 54 mbps signal 3.0 % p out output power to meet 802.11g ofdm 6 mbps spectrum mask 24.5 25.5 dbm output power to meet 802.11b dsss 1 mbps s pectrum mask 24.5 25.5 dbm t6.1 75029
?2014 silicon storage technology, inc. ds70005029c 07/15 21 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 2mm x 2mm, 12-contact xqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, unless otherwise specified figure 20: s-parameters s11 v ersus frequency fre quency (ghz) s11 (db) fre quency (ghz) s21 (db) s22 (db) fre quency (ghz) s12 (db) fre quency (ghz) 1424 s-parms. 4.2 s12 v ersus frequency s21 v ersus frequency s22 v ersus frequency - 30 - 25 - 20 - 15 - 10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8 .0 - 8 0 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8 .0 -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8 .0 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8 .0
?2014 silicon storage technology, inc. ds70005029c 07/15 22 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 2mm x 2mm, 12-contact xqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, 54 mbps 802.11g ofdm sig- nal unless otherwise noted figure 21: evm versus output power measured with equalizer training set to sequence only 1424 f18.0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 evm (%) output power (dbm) evm versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz
?2014 silicon storage technology, inc. ds70005029c 07/15 23 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 2mm x 2mm, 12-contact xqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, 54 mbps 802.11g ofdm sig- nal unless otherwise noted figure 22: gain versus output power figure 23: total current consumption for 802.11g operation versus output power 1424 f16.1 20 22 24 26 28 30 32 34 36 38 40 012345678910111213141516171819202122232425262728 power gain (db) output power (dbm) power gain versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1424 f19.1 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 supply current (ma) output power (dbm) supply current versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz
?2014 silicon storage technology, inc. ds70005029c 07/15 24 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet 2mm x 2mm, 12-contact xqfn high-li nearity configuration (continued) test conditions: v cc = 3.3v, v reg = 2.85v, t a = 25c, 54 mbps 802.11g ofdm sig- nal unless otherwise noted figure 24: detector characteristics versus output power figure 25: typical schematic for high-linearity, 802.11b/g/n/256 qam applications for 12- contact xqfn 1424 f20.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 detector voltage (v) output power (dbm) detector voltage versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz rfo u t 100pf 100pf 3.0pf rfin v reg1 v reg2 10 f 0.1 f v cc f 0.1 91 51 det 1424 schematic.5.1 su ggested operation conditions: 1 v cc = 3.3v 2. vreg1=vreg2=2.85v 100 f 0.1 sst12lp15b 2x2 12l xqfn top vie w 12 11 10 7 9 8 2 1 3 456 f 0.1 5mm 50 / 2.7 mm 6 8
?2014 silicon storage technology, inc. ds70005029c 07/15 25 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet product ordering information valid combinations for sst12lp15b sst12lp15b-qvce sst12lp15b-qxbe sst12lp15b evaluation kits sst12lp15b-qvce-k SST12LP15B-QXBE-K note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid co mbinations and to determine availability of new combi- nations. sst 12 lp 15b - qvce xx xx xxx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact b = 12 contact package type qv = vqfn (3mm x 3mm) qx = xqfn (2mm x 2mm) product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix ?e? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?.
?2014 silicon storage technology, inc. ds70005029c 07/15 26 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet packaging diagrams figure 26: 16-contact very-thin quad flat no-lead (vqfn) package code: qvc for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: microchip technology drawing c04-14015a sheet 1 of 1 16-lead very thin quad flatpack no-leads (qvce/f) - 3x3 mm body [vqfn] 16-vqfn-3x3-qvc-2.0 note: 1. complies with jedec jep95 mo-220j, variant veed-4 except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain vss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the vss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min).
?2014 silicon storage technology, inc. ds70005029c 07/15 27 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet figure 27: 12-contact extremely-thin quad flat no-lead (xqfn) package code: qxb for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: microchip technology drawing c04-14012a sheet 1 of 1 12-lead extremely thin quad flatpack no-leads (qxbe/f) - 2x2 mm body [xqfn] note: 1. complies with jedec jep95 mo-220j, variant veed-4 except external paddle nominal dimensions and pull-back of terminals from body edge. 2. the topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. 3. from the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 4. the external paddle is electrically connected to the die back-side and possibly to certain vss leads. this paddle must be soldered to the pc board; it is required to connect this paddle to the vss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 5. untoleranced dimensions are nominal target dimensions. 6. all linear dimensions are in millimeters (max/min).
?2014 silicon storage technology, inc. ds70005029c 07/15 28 2.4 ghz wlan 802.11b,g,n, 256 qam power amplifier sst12lp15b data sheet table 7: revision history revision description date 00 ? initial release of data sheet mar 2010 01 ? added qvc package to the data sheet. this required changes through- out the document and the addition of the following: figures 1, 3, 13-18, and 27; tables 1, 5, and 8. ? changed document status from ?data sheet? to ?preliminary specifica- tion? oct 2010 02 ? added figures 20 - 25 and tables 4 and 7 jan 2011 03 ? updated document status from ?preliminary specification? to ?data sheet? feb 2011 a ? applied new document format ? released document under letter revision system ? updated spec number s71424 to ds75029 ? updated xqfn information in figures 20- 25 ? added package dimensions throughout. oct 2012 b ? added information for 4.5v. jul 2014 c ? modified features and applications on page 1 ? updated ?electrical specifications? on page 7 ? revised table 4 on page 8 ? replaced figures 6,8,9,10 and added figure 7. updated figure 11. ? updated test conditions throughout. jul 2015 ? 2015 microchip technology inc. sst, silicon storage technology, the sst logo, superflash, and mtp are registered trademarks of microchip technology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of microc hip technology, inc. all other trademarks and registered trade- marks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for th e most recent documentation. for the most current package drawings, please see the packaging specific ation located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity ; actual usable capacity may be less. microchip makes no warranty for the use of its products other than those expressly contained in the standard terms and conditio ns of sale. for sales office locations and information, please see www.microchip.com. www.microchip.com isbn:978-1-63277-576-4

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